| 摘要 |
Disclosed is a chip scale gas discharge protective device whose metal coupled electrodes are fabricated through processes of yellow light, image formation, and electro-casting of metal electrode, and the two electrodes are facing each other in arch lines with the distance of a gap controlled within the range of 0.5~10 mum, wherein the entire structure is performed by a bridge process without an extra gas filling procedure in the gap. Due to the fact that the gap is as small as only several mum, a relevant potential difference existing across there is sufficient to ionize the air thereby suppressing the electro-static discharge (ESD) through the protected electronic device, whereas the fabrication method is disclosed.
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