发明名称 |
THREE DIMENSIONAL NAND MEMORY AND METHOD OF MAKING THEREOF |
摘要 |
A monolithic, three dimensional NAND string includes a first memory cell located over a second memory cell. A semiconductor active region of the first memory cell is a first pillar having a square or rectangular cross section when viewed from above, the first pillar being a first conductivity type semiconductor region located between second conductivity type semiconductor regions. A semiconductor active region of the second memory cell is a second pillar having a square or rectangular cross section when viewed from above, the second pillar located under the first pillar, the second pillar being a first conductivity type semiconductor region located between second conductivity type semiconductor regions. One second conductivity type semiconductor region in the first pillar contacts one second conductivity type semiconductor region in the second pillar. |
申请公布号 |
WO2008118432(A1) |
申请公布日期 |
2008.10.02 |
申请号 |
WO2008US03906 |
申请日期 |
2008.03.26 |
申请人 |
SANDISK 3D LLC;MOKHLESI, NIMA;SCHEUERLEIN, ROY |
发明人 |
MOKHLESI, NIMA;SCHEUERLEIN, ROY |
分类号 |
H01L21/8246;H01L21/336;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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