| 摘要 |
A semiconductor memory device is provided to reduce resistance resulting from a connection unit for connecting a bit line sense amplifier with a bit line of a cell array. A semiconductor memory device includes a sense amplifier(400), and first and second cell arrays(100A,100B). The sense amplifier amplifies a data signal. The first cell array includes plural first word lines corresponding to an inputted address and a first connection unit for delivering a data signal corresponding to a word line selected from the plural first word lines to the sense amplifier. The second cell array includes plural second word lines corresponding to the address and a second connection unit for delivering a data signal corresponding to a word line selected from the plural second word lines to the sense amplifier. |
