发明名称 POLISHING AMOUNT MEASURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a polishing amount measuring method capable of easily and surely measuring the polishing amount of a thin layer formed by patterning on a substrate and of achieving polishing with high accuracy. <P>SOLUTION: This polishing amount measuring method includes: a step for forming the thin layer 30 by patterning on the substrate 20 and a dummy thin layer 32 with the same thickness as that of the thin layer 30; a step for forming a stopper layer 40 on the dummy thin layer 32; a step for forming an insulating layer 50 on the substrate 20, the thin layer 30 and the dummy thin layer 32; a polishing step for polishing the insulating layer 50 and the thin layer 30; a step for removing the stopper layer 40 from the dummy thin layer 32; and a step for measuring the polishing amount (D) of the thin layer 30 in the polishing step by measuring a step height between the polished thin layer 30 and the dummy thin layer 32. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008229741(A) 申请公布日期 2008.10.02
申请号 JP20070069143 申请日期 2007.03.16
申请人 FUJITSU LTD 发明人 TACHIBANA MASANORI;MIYAZAWA HIROYUKI
分类号 B24B37/013;H01L21/304 主分类号 B24B37/013
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