发明名称 PLASMA CVD SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a plasma CVD system where the phenomenon that temperature conditions are changed due to the state of a substrate as the object for film deposition, so as to generate variation in film deposition is suppressed. SOLUTION: A stage 11 cooled by a cooling member 13 is mounted with an anode 12 composed of graphite. The graphite can transmit a large quantity of heat by the radiation of the heat. The contribution to the temperature of a substrate 1 by contact heat conduction depending on the contact area between the anode 12 and the substrate 1 and the contact area between the anode 12 and the stage 11 is relatively reduced; thus the temperature control of the substrate 1 can be facilitated. In this way, the phenomenon that cooling conditions are changed due to the state of the substrate 1, so as to generate variation in film deposition can be suppressed. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008231513(A) 申请公布日期 2008.10.02
申请号 JP20070073357 申请日期 2007.03.20
申请人 KOCHI PREFECTURE SANGYO SHINKO CENTER;CASIO COMPUT CO LTD 发明人 NISHIMURA KAZUHITO;SASAOKA HIDENORI
分类号 C23C16/458;H01L21/205 主分类号 C23C16/458
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