发明名称 |
HIGH VOLTAGE SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME |
摘要 |
An exemplary embodiment of a semiconductor device capable of high-voltage operation includes a substrate with a well region therein. A gate stack with a first side and a second side opposite thereto, overlies the well region. Within the well region, a doped body region includes a channel region extending under a portion of the gate stack and a drift region is adjacent to the channel region. A drain region is within the drift region and spaced apart by a distance from the first side thereof and a source region is within the doped body region near the second side thereof. There is no P-N junction between the doped body region and the well region.
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申请公布号 |
US2008237703(A1) |
申请公布日期 |
2008.10.02 |
申请号 |
US20070692213 |
申请日期 |
2007.03.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN YI-CHUN;CHEN CHI-CHIH;WU KUO-MING;LIU RUEY-HSIN |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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