发明名称 |
PLASMA PROCESSING APPARATUS OF SUBSTRATE AND PLASMA PROCESSING METHOD THEREOF |
摘要 |
A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.
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申请公布号 |
US2008237185(A1) |
申请公布日期 |
2008.10.02 |
申请号 |
US20080052522 |
申请日期 |
2008.03.20 |
申请人 |
UI AKIO;ICHIKAWA TAKASHI;TAMAOKI NAOKI;HAYASHI HISATAKA;KOJIMA AKIHIRO |
发明人 |
UI AKIO;ICHIKAWA TAKASHI;TAMAOKI NAOKI;HAYASHI HISATAKA;KOJIMA AKIHIRO |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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