| 摘要 |
PURPOSE:To improve safety as well as to contrive reduction in cost by a method wherein a solid-state doping material is shaved off by silicon-containing raw gas having etching property, and a film is formed on the surface of a substrate using said mixed gas. CONSTITUTION:Using the silicon-containing raw gas such as silicon tetrafluoride and the like, having etching property, and a solid-state doping material 11, the solid-state doping material 11 is smoothed utilizing the etching, property raw gas, and a film is formed on the surface of a substrate 100 using said mixed gas. As the film is formed without using doping gas, the safety of work can be improved and cost can also be reduced. |
