Resistive switching memory cell e.g. phase change random access memory cell, operating method for e.g. flash memory, involves reading memory cell data content by applying voltage to cell in range of one threshold voltage or higher voltage

摘要

The method involves displacing a resistive switching memory cell by applying a threshold voltage in a low impedance condition and by applying another threshold voltage in a high impedance condition. Data content of the memory cell is read-out by applying a voltage to the memory cell in a range of one of the threshold voltages or a higher voltage. A voltage pulse is applied at the memory cell for reading the data content, where the voltage pulse is temporary so that the data content of the memory cell is formed in an unchanged condition. An independent claim is also included for a memory system with a set of resistive switching memory cells.