发明名称 |
METHOD FOR MANUFACTURING THIN FILM TRANSISTORS BASED ON TITANIUM OXIDES AS ACTIVE LAYER AND STRUCTURE THEREOF |
摘要 |
<p>A manufacturing method and a structure of a thin film transistor are provided to prevent harmful environment by forming a titanium oxide as an active layer of the thin film transistor. An active layer(140) is formed on a substrate(110) by using a polycrystalline or amorphous titanium oxide layer. An insulating layer(150) is formed on the active layer. A gate electrode(160) is formed on the insulating layer. A source electrode(120) and a drain electrode(130) are formed on the substrate. The source electrode and the drain electrode are covered with an active layer. The source electrode and the drain electrode are covered with an insulating layer. The active layer is formed by using Ti-doped TiOx. The Ti-doped TiOx is formed by diffusing Ti atoms to the polycrystalline or amorphous titanium oxide layer.</p> |
申请公布号 |
KR20080088341(A) |
申请公布日期 |
2008.10.02 |
申请号 |
KR20070101638 |
申请日期 |
2007.10.09 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
PARK, JAE WOO;YOO, SEUNG HYUP |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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