| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device improved in robustness against impacts to a bonding pad when probing and bonding. <P>SOLUTION: The semiconductor device with a bonding pad 130 on a semiconductor substrate 10 includes an upper Cu layer 100 formed on a lower surface of the bonding pad 130 via a barrier metal and having a larger Cu area ratio than a layer on which circuit wiring is formed, and a lower Cu layer 200 electrically insulated from the upper Cu layer 100 and formed on the side of the semiconductor substrate 10 from the upper Cu layer 100. <P>COPYRIGHT: (C)2009,JPO&INPIT |
