| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for measuring a temperature of a semiconductor surface capable of measuring a temperature of a semiconductor surface, when a rapid heating process of a miniaturized semiconductor is performed at a high temperature as long as tens of seconds to 1 millisecond in Spike RTA, the SpikeRTA being the latest generation wafer heat-treatment process, or flash lamp annealing (FLA), the FLA being under development as a next generation wafer heat-treatment process. SOLUTION: When a surface of a semiconductor is subjected to a rapid heat-treatment with a lamp in a heat-treatment device 1 and the temperature of the semiconductor surface is measured with a radiation thermometer 7, two non-reflection ports 5, 6 are provided in sidewalls or top boards, arranged at symmetric positions with respect to the vertical direction of a semiconductor substrate arranged in the heat-treatment device, and the radiation thermometer 7 is provided outside one of the ports. COPYRIGHT: (C)2009,JPO&INPIT
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