| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein the value of resistance in a resistive element is changed by the thermal diffusion of impurities from the lower electrode of a capacitive element to the resistive element section due to heat treatment in the formation of a dielectric film in the capacitive element when creating a semiconductor element, such as MISFETs, the capacitive elements, and the resistive elements, on the same semiconductor substrate. SOLUTION: In a method of manufacturing a semiconductor device, a conductive material between the lower electrode section for composing the capacitive element and the resistive element is removed partially to form a removed part, thus breaking the thermal diffusion of impurities in the film due to heat treatment in the formation of the dielectric film of the capacitive element and preventing the concentration of impurities in the resistive element from changing. With such a manufacturing method, the resistive element having a prescribed resistance value can be obtained. COPYRIGHT: (C)2009,JPO&INPIT
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