| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of flattening a semiconductor device which can suppress irregularity in a chip while minimizing a quantity of dummy pattern insertion by removing part of a dummy pattern, and also a semiconductor device flattening system. SOLUTION: In the method of flattening a semiconductor device which introduces the dummy pattern as not to electrically function except for grooves formed as wiring with use of a simulation server during manufacture of the semiconductor device, the dummy pattern having a prescribed spacing is introduced in all area other than wiring and other locations where such a pattern as to electrically function is present on design data, and then the dummy pattern on the design data is removed from such a location that a film thickness is predicted to become large after CMP process to manufacture a shadow mask using the design data after the dummy pattern is removed. COPYRIGHT: (C)2009,JPO&INPIT
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