发明名称 MOSFET GATE INTERFACE
摘要 In some embodiments a power circuit includes a driver output, a MOSFET, and circuitry to ensure a full and fast positive drive to a gate of the MOSFET when the driver output goes to a high signal level, and to ensure a full and fast low negative drive to the gate of the MOSFET when the driver output goes to a low signal level. Other embodiments are described and claimed.
申请公布号 US2008238528(A1) 申请公布日期 2008.10.02
申请号 US20070694928 申请日期 2007.03.30
申请人 WICKERSHAM ROBERT D;RIDER WILLIAM 发明人 WICKERSHAM ROBERT D.;RIDER WILLIAM
分类号 H03K17/567 主分类号 H03K17/567
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