| 摘要 |
A plasma etching method, a plasma processing apparatus, a control program, and a computer readable storage medium are provided to secure a sufficient etching rate and to perform a silicon etching process by using a resist as a mask. A supporting table(2) for supporting horizontally a semiconductor wafer(W) is formed in an inside of a chamber(1). The supporting plate is supported by an insulating plate(3) and a conductor supporter(4). A focus ring(5) is formed at an outer circumference of an upper side of the supporting table. The supporting table and the conductor supporter are elevated by using a ball screw mechanism including a ball screw(7). A bellows cover(9) is formed at an outside of a bellows(8). A baffle plate(10) is formed at the outside of the focus ring. An exhaust port(11) is formed at a sidewall of a lower part of the chamber. An exhaust system(12) is connected to the exhaust port. A gate valve(13) is formed over the sidewall of the lower part of the chamber. An RF power source(15) is connected to the supporting table through a matching device(14). A shower head(20) is opposite to the supporting table. An electrostatic chuck(6) is formed on a surface of the supporting table. A refrigerant chamber(17) is formed in the inside of the supporting table. A process gas supply system(25) is connected to a gas supply tube(24).
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