| 摘要 |
A method and an apparatus for monitoring the wafer polishing are provided to detect accurately a polishing removal end point of a conductive film by using a change of a transmitted electromagnetic wave OR a reflected electromagnetic wave. A method for monitoring the wafer polishing is performed by using a processing device for carrying out a process for polishing and removing a conductive film(8) on a surface of a wafer(W) and a flattening process. In the wafer polish monitoring method, a high-frequency transmission path(9) is formed in a part facing the surface of the wafer. A polishing removal state of the conductive film is evaluated from one of a transmitted electromagnetic wave and a reflected electromagnetic wave. A polishing removal end point and a point corresponding to the polishing removal end point are detected.
|
