| 摘要 |
A semiconductor memory device and a driving method thereof are provided to maintain optimum process and data output timing by controlling delay values of clocks, outputted from a delay locked loop, different from each other. A semiconductor memory device includes a delay locked loop circuit(100), a tAC controller(100A), a reference signal generator(2000), and a data output block(1000). The delay locked loop circuit generates a delay locked clock through delay locked operation. The tAC controller adjusts a delay value of the delay locked clock and delivers the adjusted delay value in order to control tAC timing. The reference signal generator generates a data latch reference signal in response to the delay locked clock. The data output block latches data provided from a memory core area in response to the data latch reference signal and outputs the data in response to a clock outputted from the tAC controller.
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