发明名称 PLASMA PROCESSING DEVICE
摘要 A plasma processing device is provided to suppress degradation of a DC current flowing in an accommodation chamber for a long time. An accommodation chamber performs plasma processing by accommodating a substrate. A radio frequency electrode supplies radio frequency power into the accommodation chamber. A DC electrode applies a DC voltage into the accommodation chamber. A ground electrode of the applied DC voltage is prepared in the accommodation chamber. An exhaust device exhausts the accommodation chamber. A shielding member(46) is intervened between air flow and the ground electrode, and forms a groove type space(47) with the ground electrode, according to the air flow.
申请公布号 KR20080088395(A) 申请公布日期 2008.10.02
申请号 KR20080021959 申请日期 2008.03.10
申请人 TOKYO ELECTRON LIMITED 发明人 HONDA MASANOBU
分类号 H05H1/34;H01L21/3065 主分类号 H05H1/34
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