| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting element in structure capable of easily obtaining emission in the long-wavelength region, without impairing the luminous efficiency in an active layer. <P>SOLUTION: A GaN substrate 1 has a main surface (for example, an m surface) other than a c surface, absorbs ultraviolet rays, and generates green to yellow light. On one main surface of the GaN substrate 1, a group-III nitride semiconductor layer 2 is formed. The group-III nitride semiconductor layer 2 has a lamination structure, where an n-type contact layer 21, a multiple quantum well layer 22, a GaN final barrier layer 25, a p-type electron blocking layer 23, and a p-type contact layer 24 are laminated successively from the side of the GaN substrate 1. The multiple quantum well layer 22 has a first quantum well layer 221 and a second quantum well layer 222. The first quantum well layer 221 generates ultraviolet region light, and the second quantum well layer 222 generates blue light. <P>COPYRIGHT: (C)2009,JPO&INPIT |
