| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has two insulation layers having different patterns formed by one mask step, and a method of manufacturing the same. SOLUTION: In the semiconductor device having double insulation layers, the double insulation layers include: a first insulation layer having a first pattern; a second insulation layer which has a pattern differing from that of the first pattern and includes a material differing from that of the first insulation layer and is provided on the first insulation layer; a first region in which the first insulation layer and the second insulation layer overlap; a second region in which the first insulation layer is disposed; and a third region in which the insulation layers are absent. COPYRIGHT: (C)2009,JPO&INPIT |
