| 摘要 |
With an ultrasound pulser suitable for application to a medical ultrasound system, and so forth, a high voltage power supply of a transducer drive circuitry, on both high potential and low potential sides, is rendered variable in a range of 0 V on the order of ±200 V, thereby implementing a semiconductor integrated circuit wherein a plurality of the ultrasound pulsers corresponding to a plurality of channels, respectively, are integrally formed on a small area. The ultrasound pulser has a configuration wherein, in a MOSFET gate drive circuitry, an input voltage pulse is converted into a current pulse, and the current pulse is converted again into a voltage pulse on the basis of a high potential side voltage +HV, and a low potential side voltage -HV, applied to a transducer drive circuitry, whereupon voltage level shift in the input voltage pulse is attained, and a voltage pulse swing of an output buffer of the MOSFET gate drive circuitry receiving a shifted voltage pulse is generated by the MOSFET gate drive circuitry similarly on the basis of the high potential side voltage +HV, and the low potential side voltage -HV, applied to the transducer drive circuitry. The MOSFET gate drive circuitry is DC-coupled with the transducer drive circuitry.
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