发明名称 METHOD FOR FABRICATING BACK END OF THE LINE STRUCTURES WITH LINER AND SEED MATERIALS
摘要 A sputter-etching method employed to achieve a thinned down noble metal liner layer deposited on the surface or field of an intermediate back end of the line (BEOL) interconnect structure. The noble metal liner layer is substantially thinned down to a point where the effect of the noble metal has no significant effect in the chemical-mechanical polishing (CMP) process. The noble metal liner layer may be completely removed by sputter etching to facilitate effective planarization by chemical-mechanical polishing to take place.
申请公布号 US2008242082(A1) 申请公布日期 2008.10.02
申请号 US20080137875 申请日期 2008.06.12
申请人 YANG CHIH-CHAO;CHEN SHYNG-TSONG;PONOTH SHOM;SPOONER TERRY A 发明人 YANG CHIH-CHAO;CHEN SHYNG-TSONG;PONOTH SHOM;SPOONER TERRY A.
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
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