发明名称 |
VERTICAL STRUCTURE SEMICONDUCTOR DEVICES |
摘要 |
The invention provides a reliable way to fabricate a new vertical structure compound semiconductor device with improved light output and a laser lift-off processes for mass production of GaN-based compound semiconductor devices. A theme of the invention is employing direct metal support substrate deposition prior to the LLO by an electro-plating method to form an n-side top vertical structure. In addition, an ITO DBR layer is employed right next to a p-contact layer to enhance the light output by higher reflectivity. A perforated metal wafer carrier is also used for wafer bonding for easy handling and de-bonding. A new fabrication process is more reliable compared to the conventional LLO-based vertical device fabrication. Light output of the new vertical device having n-side up structure is increased 2 or 3 times higher than that of the lateral device fabricated with same GaN/InGaN epitaxial films. |
申请公布号 |
WO2005104780(A3) |
申请公布日期 |
2008.10.02 |
申请号 |
WO2005US14634 |
申请日期 |
2005.04.27 |
申请人 |
VERTICLE, INC;YOO, MYUNG CHEOL |
发明人 |
YOO, MYUNG CHEOL |
分类号 |
H01L29/00;H01L21/00;H01L21/268;H01L29/22;H01L33/00;H01S5/02;H01S5/024;H01S5/042;H01S5/183;H01S5/343 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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