发明名称 PHASE-SEPARATED DIELECTRIC STRUCTURE FABRICATION PROCESS
摘要 A process for fabricating an electronic device including: depositing a laye r comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not pha se separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentrati on than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising th e semiconductor is prior to the liquid depositing the dielectric composition o r subsequent to the causing phase separation.
申请公布号 CA2627393(A1) 申请公布日期 2008.10.02
申请号 CA20082627393 申请日期 2008.03.25
申请人 XEROX CORPORATION 发明人 MAHABADI, HADI K.;ONG, BENG S.;WU, YILIANG;SMITH, PAUL F.
分类号 H01L21/02;H01L21/324;H01L49/02 主分类号 H01L21/02
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