发明名称 |
PHASE-SEPARATED DIELECTRIC STRUCTURE FABRICATION PROCESS |
摘要 |
A process for fabricating an electronic device including: depositing a laye r comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not pha se separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentrati on than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising th e semiconductor is prior to the liquid depositing the dielectric composition o r subsequent to the causing phase separation.
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申请公布号 |
CA2627393(A1) |
申请公布日期 |
2008.10.02 |
申请号 |
CA20082627393 |
申请日期 |
2008.03.25 |
申请人 |
XEROX CORPORATION |
发明人 |
MAHABADI, HADI K.;ONG, BENG S.;WU, YILIANG;SMITH, PAUL F. |
分类号 |
H01L21/02;H01L21/324;H01L49/02 |
主分类号 |
H01L21/02 |
代理机构 |
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地址 |
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