| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing contact resistance between an ohmic electrode and an electron travelling layer. <P>SOLUTION: The semiconductor device comprises a nitride semiconductor layer 24 which is provided on a substrate 10 and comprises an electron travelling layer 18 and an electron supply layer 22, a p-type nitride semiconductor layer 14 provided in the nitride semiconductor layer 24, an n-doping region 26 which is provided in the nitride semiconductor layer 24 to reach the electron travelling layer 18, a gate electrode 44 provided on the electron supply layer 22, and ohmic electrodes 40 and 42 provided to contact the n-type doping region 26. <P>COPYRIGHT: (C)2009,JPO&INPIT |
