| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress the reaction of an Al pad and an Au wiring layer due to the formation of a bonding wire on the Al pad. <P>SOLUTION: The semiconductor device includes: a pad 20 provided on a compound semiconductor layer 12, including Al, and provided with a wiring connection part 26 provided evading a bonding region 28; a wiring layer 34 including Au, which is electrically connected to the wiring connection part 26 of the pad 20; and a barrier layer 32 provided between the wiring connection part 26 and the wiring layer 34. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
