| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor whose collector size is reduced by improving a separation structure between semiconductor layers, whereby the current between the semiconductor layers can flow in the shortest path and the collector resistance can be minimized, and to provie its manufacturing method. SOLUTION: The manufacturing method of the bipolar transistor 100 comprises the steps of forming a collector region 102 on a substrate 101 that forms an epitaxial layer 115 over the substrate 101 including the collector region 102; forming a base region 103 in the epitaxial layer 115; forming an emitter region 104 in the base region 103; forming a trench penetrating through the emitter region 104 and the base region 103; and extending to the collector region 102, forming an oxide layer 108 on sidewalls of the trench, and forming a polysilicon layer 110 in the trench. COPYRIGHT: (C)2009,JPO&INPIT
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