| 摘要 |
PROBLEM TO BE SOLVED: To provide a new method of manufacturing a semiconductor, which includes a step of removing silicon oxide film in an easy method. SOLUTION: The method of manufacturing a semiconductor device includes a step of immersing a base member 20, in which silicon oxide film 16a is formed partly in an isolated state on its surface, in organic alkaline fluid 21; and a step of exfoliating a silicon oxide film 16a from the base member 20 selectively by immersing the processed base member 20 into water 22 (liquid containing water) and applying an ultrasonic wave. COPYRIGHT: (C)2009,JPO&INPIT
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