发明名称 Method for treating a damaged porous dielectric
摘要 In the manufacture of electronic devices that use porous dielectric materials, the properties of the dielectric in a pristine state can be altered by various processing steps. In a method for restoring and preserving the pristine properties of a porous dielectric layer, a substrate is provided with a layer of processed porous dielectric on top, whereby the processed porous dielectric is at least partially exposed. A thin aqueous film is formed at least on the exposed parts of the processed porous dielectric. The exposed porous dielectric with the aqueous film is exposed to an ambient containing a mixture comprising at least one silylation agent and dense CO<SUB>2</SUB>, resulting in the restoration and preservation of the pristine properties of the porous dielectric.
申请公布号 US2008241499(A1) 申请公布日期 2008.10.02
申请号 US20070824818 申请日期 2007.07.03
申请人 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) 发明人 SINAPI FABRICE;VAN HOEYMISSEN JAN ALFONS B.
分类号 B32B3/26;B05D3/00 主分类号 B32B3/26
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