CVD FILM-FORMING APPARATUS

摘要

Disclosed is a film-forming apparatus wherein a predetermined film is formed on a wafer (W) by CVD by reacting a film-forming gas on the surface of the wafer, while heating the wafer (W) placed on a stage (22) with a heating mechanism. This film-forming apparatus also comprises a cover member (24) which is so arranged as to cover the outer portion of the wafer (W) on the stage (22) and has a base member (24a) and a low emissivity film (24b) arranged on at least the rear surface of the base member.