| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which tests a memory cell at a high speed with high precision and to provide a method therefor. <P>SOLUTION: The semiconductor storage device comprises a memory cell array MCA where memory cells are arrayed 2-dimensionally, word lines WL connected to the memory cells on each rows of the memory cell array, bit lines BL connected to the memory cells on each column of the memory cells, sense amplifiers S/A connected to the bit lines for detecting data stored in the memory cells, test pads PAD for supplying a preset reference current from a power supply, and a test circuit MC connected between the power supply and the test pads PAD and supplying a test current corresponding to the reference current through the bit lines to a target memory cell out of the memory cells. <P>COPYRIGHT: (C)2009,JPO&INPIT |
