| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element capable of extracting light having high polarization ratio. <P>SOLUTION: A group-III nitride semiconductor layer 2 is formed on a GaN single-crystal substrate 1 with a nonpolar surface or a semi-polar surface (for example, an m surface) as a main surface. The group-III nitride semiconductor layer 2 has an n-type contact layer 21, a multiple quantum well layer 22, a GaN final barrier layer 25, a p-type electron blocking layer 23, and a p-type contact layer 24 laminated successively from the side of the GaN single-crystal substrate 1. On the surface of the p-type contact layer 24, an anode electrode 3 as a transparent electrode is formed. A filtering layer 8 is formed so that it covers the anode electrode 3. The filtering layer 8 has a different transmittance, depending on the wavelength region. <P>COPYRIGHT: (C)2009,JPO&INPIT |
