发明名称 INTERMEDIATE OF ELECTRONIC ELEMENT MATERIAL AND FUNCTIONAL LAYER FORMING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an intermediate of an electronic element material enabling productivity to be increased while reducing damage to a substrate during formation of a functional layer through sputtering. <P>SOLUTION: The intermediate of the electronic element material is used for manufacturing the electronic element material and is constituted by forming a prescribed functional layer on a surface 100a of the substrate 100 by sputtering, wherein a conductive discharge induction member film 102a inducing the abnormal discharge generated during the execution of sputtering is formed in the prescribed area in the outer peripheral edge of the substrate 100 not yet formed with the functional layer. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2008231498(A) 申请公布日期 2008.10.02
申请号 JP20070072046 申请日期 2007.03.20
申请人 TDK CORP 发明人 SHINODA MINORU;KOBAYASHI HIROBUMI;GOMI HIROTAKA
分类号 C23C14/34;G11B5/39 主分类号 C23C14/34
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