| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a three dimensional semiconductor integrated circuit device, along with a three dimensional semiconductor integrated circuit device manufactured by the method, that can be performed at a low cost using the technology established in an existing semiconductor process. SOLUTION: The three dimensional semiconductor device comprises a laminate in which a plurality of semiconductor chips comprising an electrode pad near the outer periphery of one main surface are so stacked that the electrode pads are vertically aligned, and a substrate where the laminate is installed with a plurality of electrodes formed. The plurality of semiconductor chips extend from the electrode pad, and a first conductor pattern is formed to cover the side wall surface of the semiconductor chips. The vertically aligned conductor patterns and the electrodes of the substrate are connected together by a second conductor pattern extending vertically in continuous manner. COPYRIGHT: (C)2009,JPO&INPIT
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