| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for treating a substrate with high density micro wave plasma capable of improving a plasma treatment rate of a substrate. SOLUTION: The apparatus for treating a substrate with micro wave plasma 30 comprises processing containers 11, 12 having a processing cavity 11A for performing plasma treatment; a substrate-holding stand formed in the processing cavity and for holding the substrate W to be processed; an exhaust passage formed between processing containers and the substrate-holding stand; an exhaust system for exhausting the processing cavity through the exhaust passage and coupled to the processing containers; a processing gas supply system for introducing the process gas into the processing space; and a micro wave antenna coupled to processing containers. The processing containers configure a micro wave window made of silica glass and consisting of a side wall part corresponding to processing containers and top part formed adjacent to the side wall, wherein an outlet/inlet 11B for the substrate to be processed is formed on the side wall of processing containers, and the out/inlet is provided with a movable shutter covered with aluminum fluoride layer or SiO<SB>2</SB>layer. COPYRIGHT: (C)2009,JPO&INPIT
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