| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating a high-quality p-type nitride-based compound semiconductor film which can decrease the resistance of a p-type nitride-based compound semiconductor crystal throughout the entire bulk with low level of defects. SOLUTION: A specimen having a GaN film previously containing Mg as a p-type impurity is placed inside a heat treatment furnace and is heated to a predetermined substrate heat treatment temperature (between 600°C and 900°C). Ammonia gas concentration in a heat treatment atmosphere is set at a predetermined level, and the specimen is kept at the constant heat treatment temperature. The atmosphere during the heat treatment is a mixture of an inactive gas and an ammonium gas, and the concentration of the ammonia gas in the mixture gas is set at a value that exceeds 30% in volume ratio. COPYRIGHT: (C)2009,JPO&INPIT
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