| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which can suppress a short channel effect by a halo region, and also can suppress the generation of a junction leak current and an increase of a junction capacitance. SOLUTION: The semiconductor device has: a Si substrate; a gate electrode formed on the Si substrate through a gate insulating film; a channel region formed below the gate electrode of the Si substrate; a source/drain region formed across the channel region; an epitaxial layer formed across the channel region and formed of a first epitaxial growth crystal not containing a conductive type impurity; and a conductive type halo region which is formed between the channel region and the epitaxial layer, is formed of a second epitaxial growth crystal containing the conductive type impurity, and differs from the source/drain region. COPYRIGHT: (C)2009,JPO&INPIT
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