| 摘要 |
Apparatus and methods for heating a substrate in a pressurized environment inside of a thermal processing system. The substrate is placed in a gaseous environment inside a processing chamber of the thermal processing system. The substrate is supported in the gaseous environment. The gas pressure inside the processing chamber is increased above atmospheric pressure, which increases the temperature of the gaseous environment. Heat is transferred from the pressurized gaseous environment to the substrate for thermally processing a layer on the substrate.
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