发明名称 MULTIPLE DIRECTIONAL SCANS OF TEST STRUCTURES ON SEMICONDUCTOR INTEGRATED CIRCUITS
摘要 Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.
申请公布号 US2008237487(A1) 申请公布日期 2008.10.02
申请号 US20070675013 申请日期 2007.02.14
申请人 KLA TENCOR 发明人 PINTO GUSTAVO A.;LESLIE BRIAN C.;ADLER DAVID L.;SATYA AKELLA V.S.;LONG ROBERT THOMAS;WALKER DAVID J.;SATYA PADMA A.
分类号 G21G5/00 主分类号 G21G5/00
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