SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
摘要
<p>Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film.</p>