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发明名称
减缓成对深沟渠电容间之短路之方法
摘要
一种减缓成对深沟渠电容间之短路之方法,其系包含于该成对深沟渠电容间形成浅沟渠隔离之前,先于该成对深沟渠间之基材形成一氮化矽层。该氮化矽层之形成可解决成对深沟渠电容间之浅沟渠隔离下方可能发生的漏电流现象。
申请公布号
TW200839939
申请公布日期
2008.10.01
申请号
TW096109096
申请日期
2007.03.16
申请人
茂德科技股份有限公司
发明人
赖素贞;廖宏魁
分类号
H01L21/762(2006.01)
主分类号
H01L21/762(2006.01)
代理机构
代理人
王宗梅
主权项
地址
新竹市新竹科学工业园区力行路19号3楼
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