发明名称 SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURING THE SAME
摘要 <p>With this semiconductor device, the distortion and cracking of a thinned portion of a semiconductor substrate are prevented to enable high precision focusing with respect to a photodetecting unit and uniformity and stability of high sensitivity of the photodetecting unit to be maintained. A semiconductor device 1 has a semiconductor substrate 10, a wiring substrate 20, conductive bumps 30, and a resin 32. A CCD 12 and a thinned portion 14 are formed on semiconductor substrate 10. Electrodes 16 of semiconductor substrate 10 are connected via conductive bumps 30 to electrodes 22 of wiring substrate 20. Insulating resin 32 fills a gap between outer edge 15 of thinned portion 14 and wiring substrate 20 to reinforce the bonding strengths of conductive bumps 30. This resin 32 is a resin sheet that has been formed in advance so as to surround a periphery of a gap between thinned portion 14 and wiring substrate 20 except for portions of the periphery.</p>
申请公布号 EP1672695(A4) 申请公布日期 2008.10.01
申请号 EP20040788124 申请日期 2004.09.24
申请人 HAMAMATSU PHOTONICS K.K. 发明人 KOBAYASHI, HIROYA;MURAMATSU, MASAHARU
分类号 H01L27/14;H01L21/56;H01L21/60;H01L23/31;H01L27/148;H01L31/02;H04N5/335;H04N5/365;H04N5/369;H04N5/372 主分类号 H01L27/14
代理机构 代理人
主权项
地址