发明名称 |
Silicon carbide metal-semiconductor field effect transistors and methods of fabricating silicon carbide metal-semiconductor field effect transistors |
摘要 |
<p>A metal-semiconductor ficld-cffcct transistor is disclosed comprising: a silicon carbide substrate (10); an n-type epitaxial layer (14) of n-type conductivity silicon carbide on the substrate; ohmic contacts (20,22) on the n-type epitaxial layer that respectively define a source and a drain; a cap layer of n-type silicon carbide on the n-type epitaxial layer, the cap layer (15) including a first recess therein and a second recess in the n-type epitaxial layer within the first recess in the cap layer; and a Schottky metal contact (40) on the n-type epitaxial layer that is between the ohmic contacts, and thereby between the source and the drain, to form an active channel in the n-type epitaxial layer between the source and the drain when a bias is applied to the Schottky metal contact, the Schottky metal contact being within the recess in the n-type epitaxial layer. Also disclosed is a corresponding method.</p> |
申请公布号 |
EP1976020(A2) |
申请公布日期 |
2008.10.01 |
申请号 |
EP20080160291 |
申请日期 |
2001.02.15 |
申请人 |
CREE, INC. |
发明人 |
ALCORN, TERRENCE S;PALMOUR, JOHN W;ALLEN, SCOTT T |
分类号 |
H01L21/04;H01L21/28;H01L21/338;H01L21/76;H01L29/24;H01L29/417;H01L29/47;H01L29/66;H01L29/812 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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