A light emitting diode having a capacitor is provided to reduce a manufacturing cost of a light emitting diode package by simplifying a package process. A first conductive type gallium nitride-based semiconductor layer(55) is formed on a substrate(51). A second conductive type gallium nitride-based semiconductor layer(59) is formed on the first conductive type gallium nitride-based semiconductor layer. An active layer(57) is formed between the first conductive type gallium nitride-based semiconductor layer and the second conductive type gallium nitride-based semiconductor layer. A transparent conductive layer(69) is formed on the second conductive type gallium nitride-based semiconductor layer. A dielectric layer(67) is formed between the second conductive type gallium nitride-based semiconductor layer and the transparent conductive layer.
