发明名称 |
EDGE TERMINATION STRUCTURES FOR SILICON CARBIDE DEVICES AND METHODS OF FABRICATING SILICON CARBIDE DEVICES INCORPORATING SAME |
摘要 |
An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon carbide layer that at least partially surround a silicon carbide-based junction, an insulating layer on the floating guard rings, and a silicon carbide surface charge compensation region between the floating guard rings and adjacent the surface of the silicon carbide layer. A silicon nitride layer is on the silicon carbide layer, and an organic protective layer is on the silicon nitride layer. An oxide layer may be between the silicon nitride layer and the surface of the silicon carbide layer. Methods of forming edge termination structures are also disclosed. |
申请公布号 |
EP1974387(A1) |
申请公布日期 |
2008.10.01 |
申请号 |
EP20070718354 |
申请日期 |
2007.01.08 |
申请人 |
CREE, INC. |
发明人 |
RYU, SEI-HYUNG;AGARWAL, ANANT K.;WARD, ALLAN |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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