发明名称 |
Light emitting diode having well and/or barrier layers with superlattice structure |
摘要 |
A light emitting diode (LED) having well and/or barrier layers with a superlattice structure is disclosed. An LED has an active region between an N-type GaN-based semiconductor compound layer and a P-type GaN-based semiconductor compound layer, wherein the active region comprises well and/or barrier layers with a superlattice structure. As the well and/or barrier layers with a superlattice structure are employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer. |
申请公布号 |
EP1976031(A2) |
申请公布日期 |
2008.10.01 |
申请号 |
EP20080005777 |
申请日期 |
2008.03.27 |
申请人 |
SEOUL OPTO DEVICE CO., LTD. |
发明人 |
CHOI, JOO WON;LEE, DONG SUN;KIM, GYU BEOM;LEE, SANG JOON |
分类号 |
H01L33/06;H01L33/32;H01S5/343 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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