| 摘要 |
<p>A semiconductor device and a method for manufacturing the same are provided to enhance production efficiency by forming an SOI region and a bulk region on the same substrate. A semiconductor substrate(1) of a SOI(Silicon-On-Insulator) region is etched to form a concave. A first semiconductor layer(11) and a second semiconductor layer(13) are sequentially formed on the semiconductor substrate in the SOI region, to bury the concave. The second semiconductor layer and the first semiconductor layer are partially etched to form a trench for exposing a lateral surface of the first semiconductor substrate in the SOI region. The first semiconductor layer through the trench is etched under an etching condition for etching easily the first semiconductor layer in comparison with the second semiconductor layer, to form a cavity between the semiconductor substrate and the second semiconductor layer in the SOI region. A buried insulating layer is formed in the cavity.</p> |
