METHODS OF INCORPORATING GERMANIUM WITHIN CMOS PROCESS
摘要
<p>Methods for deposition of a Ge layer during a CMOS process on a monolithic device are disclosed. The insertion of the Ge layer enables the conversion of light to electrical signals easily. As a result of this method, standard metals can be attached directly to the Ge in completing an electrical circuit. Vias can also be used to connect to the Ge layer. In a first aspect of the invention, a method comprises the step of incorporating the deposition of Ge at multiple temperatures in a standard CMOS process. In a second aspect of the invention, a method comprises the step of incorporating the deposition of poly-Ge growth in a standard CMOS process.</p>
申请公布号
EP1631980(A4)
申请公布日期
2008.10.01
申请号
EP20040718583
申请日期
2004.03.08
申请人
LUXTERA, INC.;GUNN, LAWRENCE C. III
发明人
GUNN, LAWRENCE, C., III;CAPELLINI, GIOVANNI;RATTIER, MAXIME, J.;PINGUET, THIERRY, J.