| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to form efficiently a plurality of SOI(Silicon On Insulator) layers having a desired shape on a base substrate. A plurality of first SOI layers(114a,114b,114c,114d) and a plurality of ion implantation layers are formed on a single crystalline semiconductor substrate(100). Each of the ion implantation layers includes at least one of hydrogen and a rare gas element and is formed between the first SOI layers and between the first SOI layer and the single crystalline semiconductor substrate. A substrate having an insulating surface is bonded with the single crystalline semiconductor substrate. The first SOI layers are isolated from the single crystalline semiconductor substrate. A plurality of second SOI layers(119a,119b,119c,119d) are formed by etching selectively the first SOI layers.</p> |
